توضیحات
Product Category: MOSFET
Technology: Si
Mounting Style: Through Hole
Package / Case: TO-220-3
Number of Channels: 1 Channel
Transistor Polarity: P-Channel
Vds – Drain-Source Breakdown Voltage: – 55 V
Id – Continuous Drain Current: – 74 A
Rds On – Drain-Source Resistance: 20 mOhms
Vgs – Gate-Source Voltage: 20 V
Qg – Gate Charge: 120 nC
Fall Time: 96 ns
Height: 9.02 mm
Length: 10.67 mm
Minimum Operating Temperature: – 55 C
Pd – Power Dissipation: 200 W
Rise Time: 99 ns
Factory Pack Quantity: 50
Transistor Type: 1 P-Channel
Typical Turn-Off Delay Time: 61 ns
Typical Turn-On Delay Time: 18 ns
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